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  • K4B1G0446D-HCG8
  •   LOW VOLTAGE CMOS QUAD 2 CHANNEL MULTIPLEXER (3-STATE) WITH 5V TOLERANT INPUTS 
  • K4B1G0446D-HCH9
  •   Hex Inverters 
  • K4B1G0446D-HCJ0
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  • K4B1G0846C-ZCF7
  • SAMSUNG [Samsung semiconductor]  1Gb C-die DDR3 SDRAM Specification 
  • K4B1G0846C-ZCF8
  •   ZENER DIODES 
  • K4B1G0846C-ZCG8
  •   1/4 Diameter Single Turn Cermet Trimming Potentiometer 
  • K4B1G0846C-ZCH9
  •   Miniature Aluminum Electrolytic Capacitors 
  • K4B1G0846D-HCF7
  •   Low Profile Slide Potentiometer 
  • K4B1G0846D-HCF8
  •   1310 nm DFB LASER DIODE MODULES UNCOOLED MQW DFB LD WITH RECEPTACLE 
  • K4B1G0846D-HCG8
  •   SYNCHRONOUS DRAM 
  • K4B1G0846D-HCH9
  •   Black Surface Seven Segment Displays 
  • K4B1G0846D-HCJ0
  •   750 WATT AC/DC POWER SUPPLY 
  • K4B1G1646C-ZCF7
  • SAMSUNG [Samsung semiconductor]  1Gb C-die DDR3 SDRAM Specification 
  • K4B1G1646C-ZCF8
  •   4 Mbit 256Kb x16 UV EPROM and OTP EPROM 
  • K4B1G1646C-ZCG8
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  • K4B1G1646D-HCF7
  •   Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs 
  • K4B1G1646D-HCF8
  •   Tone ringer IC for telephone set 
  • K4B1G1646D-HCG8
  •   Tantalum Chip Capacitor 
  • K4B1G1646D-HCH9
  •   9x14 mm, 5.0 Volt, PECL, Clock Oscillator 
  • K4B1G1646D-HCJ0
  •   Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm 3mm DFN 
     
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