1MBI200NK-060
IGBT MODULE ( N series )

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• Square RBSOA
• Low Saturation Voltage
• Overcurrent Limiting Function (~3 Times Rated Current)

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Datasheet

Size: 152.46KB
Page: 4
PDF: 1MBI200NK-060.pdf
  • Description:
    IGBT MODULE ( N series )
  • MFG:
    FUJI [Fuji Electric]
 

Abstract


IGBT MODULE ( N series )
n Features
? Square RBSOA
? Low Saturation Voltage
? Overcurrent Limiting Function ( ~3 Times Rated Current)
n Outline Drawing
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 600 V
Gate -Emitter Voltage V GES ± 20 V
Continuous I C 200
Collector 1ms I C PULSE 400
Current Continuous -I C 200
1ms -I C PULSE 400
Max. Power Dissipation P C 780 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ? +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Mounting *1 3.5
Terminals *1 3.5
Note: *1:Recommendable Value; 2.5 ? 3.5 Nm (M5)
? Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =600V 2.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 30 ? A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =200mA 4.5 7.5 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =200A 2.8 V
Input capacitance C ies V GE =0V 13200
Output capacitance C oes V CE =10V 2930 pF
Reverse Transfer capacitance C res f=1MHz 1330
t ON V CC =300V 0.6 1.2
t r I C =200A 0.2 0.6
t OFF V GE = ± 15V 0.6 1.0
t f R G =9.1 ? 0.2 0.35
Diode Forward On-Voltage V F I F =200A V GE =0V 3.0 V
Reverse Recovery Time t rr I F =200A 300 ns
Reverse Currrent I RRM V R =600V 2.0 mA
? Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.16
Thermal Resistance R th(j-c) Diode 0.35 °C/W
R th(c-f) With Thermal Compound 0.025
n Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
? s
A
Nm

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