1MBI300NP-120
IGBT MODULE(N series)

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• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate -Emitter Voltage VGES ± 20 V

Collector

Current

Continuous IC 300 A
1ms IC PULSE 600
Continuous -IC 300
1ms -IC PULSE 600
Max. Power Dissipation PC 2100 W
Operating Temperature Tj +150
Storage Temperature Tstg -40 ~ +125
Isolation Voltage A.C. 1min. Vis 2500 V
Screw Torque Mounting *1 3.5 Nm
Terminals *2 4.5
Terminals *3 1.7
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5 Times Rated Current)

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Datasheet

Size: 98.12KB
Page: 4
PDF: 1MBI300NP-120.pdf
  • Description:
    IGBT MODULE(N series)
  • MFG:
    FUJI [Fuji Electric]
 

Abstract


IGBT MODULE ( N series )
n Features
? Square RBSOA
? Low Saturation Voltage
? Less Total Power Dissipation
? Improved FWD Characteristic
? Minimized Internal Stray Inductance
? Overcurrent Limiting Function (4~5 Times Rated Current)
n Applications
? High Power Switching
? A.C. Motor Controls
? D.C. Motor Controls
? Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 1200 V
Gate -Emitter Voltage V GES ± 20 V
Continuous I C 300
Collector 1ms I C PULSE 600
Current Continuous -I C 300
1ms -I C PULSE 600
Max. Power Dissipation P C 2100 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ? +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Mounting *1 3.5
Screw Torque Terminals *2 4.5 Nm
Terminals *3 1.7
Note: *1:Recommendable Value; 2.5 ? 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ? 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ? 1.7 Nm (M4)
? Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =1200V 4.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V 60 ? A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =300mA 4.5 7.5 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =300A 3.3 V
Input capacitance C ies V GE =0V 48000
Output capacitance C oes V CE =10V 17400 pF
Reverse Transfer capacitance C res f=1MHz 15480
t ON V CC =600V 0.65 1.2
t r I C =300A 0.25 0.6
t OFF V GE = ± 15V 0.95 1.5
t f R G =2.7 ? 0.35 0.5
Diode Forward On-Voltage V F I F =300A V GE =0V 3.0 V
Reverse Recovery Time t rr I F =300A 350 ns
? Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.06
Thermal Resistance R th(j-c) Diode 0.12 °C/W
R th(c-f) With Thermal Compound 0.0125
n Equivalent Circuit
Turn-on Time
Turn-off Time
? s
A

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