1MBI600PX-120
IGBT MODULE

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• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance

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Datasheet

Size: 365.63KB
Page: 5
PDF: 1MBI600PX-120.pdf
  • Description:
    IGBT MODULE
  • MFG:
    FUJI [Fuji Electric]
 

Abstract


IGBT MODULE
n Features
? Square RBSOA
? Low Saturation Voltage
? Less Total Power Dissipation
? Improved FWD Characteristic
? Minimized Internal Stray Inductance
n Applications
? High Power Switching
? A.C. Motor Controls
? D.C. Motor Controls
? Uninterruptible Power Supply
n Outline Drawing
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Collector-Emitter Voltage V CES 1200 V
Gate -Emitter Voltage V GES ± 20 V
Continuous (25°C / 80°C) I C 800 / 600
Collector 1ms (25°C / 80°C) I C PULSE 1600 / 1200
Current Continuous -I C 600
1ms -I C P ULSE 1200
Max. Power Dissipation P C 4100 W
Operating Temperature T j +150 °C
Storage Temperature T stg -40 ? +125 °C
Isolation Voltage A.C. 1min. V is 2500 V
Mounting *1 4.5
Screw Torque Terminals *2 11.0 Nm
Terminals *3 1.7
Note: *1:Recommendable Value; 4.0 ± 0.5 Nm (M6)
*2:Recommendable Value; 10.0 ± 1.0 Nm (M8)
*3:Recommendable Value; 1.5 ± 0.2 Nm (M4)
? Electrical Characteristics ( at T j =25°C )
Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current I CES V GE =0V V CE =1200V 2.0 mA
Gate-Emitter Leackage Current I GES V CE =0V V GE = ± 20V ± 0.5 ? A
Gate-Emitter Threshold Voltage V GE(th) V GE =20V I C =600mA 7.0 8.0 9.0 V
Collector-Emitter Saturation Voltage V CE(sat) V GE =15V I C =600A 2.85 3.2 V
Input capacitance C ies V GE =0V 60
Output capacitance C oes V CE =10V 9 nF
Reverse Transfer capacitance C res f=1MHz 4
t ON V CC =600V 0.75 1.20
t r I C =600A 0.02 0.60
t OFF V GE = ± 15V 0.65 1.00
t f R G =2.0 ? 0.01 0.30
Diode Forward On-Voltage V F I F =600A V GE =0V 3.4 V
Reverse Recovery Time t rr I F =600A, V GE =-15V 350 ns
? Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
R th(j-c) IGBT 0.03
Thermal Resistance R th(j-c) Diode 0.06 °C/W
R th(c-f) With Thermal Compound 0.0063
n Equivalent Circuit
Turn-on Time
Turn-off Time
? s
A

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