1N4150
SMALL SIGNAL SWITCHING DIODE

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Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
50
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
400
mA
if
Recurrent Peak Forward Current
600
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond

1.0
4.0
A
A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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Datasheet

Size: 47.53KB
Page: 1
PDF: 1N4150.pdf
  • Description:
    SMALL SIGNAL SWITCHING DIODE
  • MFG:
    CHENYI [Shanghai Lunsure Electronic Tech]
 

Abstract


CE 1N914 THRU 1N4454
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Peak Max. Max. Max.
reverse Aver. Power Junction
voltage Rectified Dissip tempera-
VRM(V) Current At 25 ture
I(AV)Ma Ptot(mW) TJ VF at IF IR at trr(ns)
(V) (mA) (nA) VR(V) Max.
1N914
100 75 500 200 1.0 10 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N41491)
100 150 500 200 1.0 10 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4150
50 200 500 200 1.0 200 100 50 4.0 IF=IR=10 to 200mA, to 0.1 IF
1N4152
40 150 400 175 0.55 0.10 50 30 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4153
75 150 400 175 0.55 0.10 50 50 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4154
35 1502) 500 200 1.0 0.10 100 25 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N44471)
100 150 500 200 1.0 20 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N44491)
100 150 500 200 1.0 30 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
1N4450
40 150 400 175 0.54 0.50 50 30 4.0 IF=IR=10mA to, IR=1mA
1N4451
40 150 400 175 0.50 0.10 50 30 10 IF=IR=10mA to, IR=1mA
1N4453
30 150 400 175 0.55 0.01 50 20
1N4454
75 150 400 175 1.0 10 100 50 4.0 IF=IR=10mA to, IR=1mA
Notes: 1.These diodes are also available in glass case DO-34
2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 R JA=400K/W
Type
Max.
Forward
Voltage
drop
Test conditions
Max.
Reverse
Current
Max. Reverse Recovery Time
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 1

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