1N4448
SMALL SIGNAL SWITCHING DIODE

Part Number:
Quantity:
Country/Region:
Email:
Description:
Code:
For complete your requirements, please fill in the part number,quantity and other contact details. So that more suppliers will contact you.
  Supplier Information Part Number Mfg Pack D/C Description Inquire

Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
        Pulse Width = 1.0 second
        Pulse Width = 1.0 microsecond

1.0
4.0
A
A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

1N400 SYNCHRONOUS DRAM 1N4000 10 WATT ZENER DIODES
1N4000A Silicon 10 WATT Zener Diodes 1N4001 GENERAL PURPOSE PLASTIC RECTIFIER
1N4001 DO-41 CMOS Voltage Detector 1N4001 / M1 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR
1N4001 M1 16-bit Proprietary Microcontroller CMOS 1N4001 M1 TONE DETECTOR (OPERATES IN HIGH NOISE CONDITIONS)
1N4001 M1 Suitable for automobile, machine, electronic equipment, air conditioner and household appliances applications 1N4001 M1-T PC Card Socket Connector Complies with PC card Standard
1N4001 MIC 7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays 1N4001(DO41.TAP/ROHS)/GW Silicon PNP epitaxial planer type
1N4001(M1) Surface Mount Oscillator 1N4001/23 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
1N4001/M1 HIGH RELIABILITY HYBRID DC-DC CONVERTERS 1N4001_NL UProcessor Supervisory
1N4001-1N4007 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 1N4001A-01 8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART
1N4001AMMO Multilayer Chip Inductors 1N4001AT-81

Datasheet

Size: 190.69KB
Page: 3
PDF: 1N4448.pdf
  • Description:
    SMALL SIGNAL SWITCHING DIODE
  • MFG:
    CHENYI [Shanghai Lunsure Electronic Tech]
 

Abstract


CE 1N4448
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Average rectified current, Half wave rectification with IAV 1501) mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mW
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ 175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage at IF=5mA VF 0.62 0.72 V
at IF=10mA VF 1 V
Leakage current at VR=20V IR 25 nA
at VR=75V IR 5 A
at VR=20V, TJ=150 IR 50 A
Junction capacitance at VR=VF=0V CJ 4 pF
Reverse breakdown voltage tested with 100 A puse V(BR)R 100 V
Reverse recovery time from IF=10mA to IR=1mA, 4
VR=6V, RL=100
Thermal resistance junction to ambient R JA 3501) 3501)
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
trr ns
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3

Stock Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  All  
About Us  |  Contact us   |  Map  |  Link   |  Custom PCB Prototype Manufacturer
© 2008-2011 TradeOfic.com Corp.All Rights Reserved.