1N5060
Silicon Rectifiers

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  SYMBOLS 1N5059 1N5060 1N5061 1N5062 UNITS
* Maximum repetitive peak reverse voltage VRRM 200 400 600 800 Volts
Maximum RMS voltage VRMS 140 280 420 560 Volts
* Maximum DC blocking voltage VDC 200 400 600 800 Volts

* Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C

I(AV) 1.0 Amp

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM 50.0 Amps
* Maximum instantaneous forward voltage at 1.0A VF 1.2 Volts

* Maximum full Load reverse current, full cycle

average 0.375” (9.5mm) TA=25°C

lead length at TA=75°C

IR(AV) 5.0 μA
150 100

* Maximum DC reverse current TA=25°C

at rated DC blocking voltage TA=175°C

IR 5.0 μA
300 200
Typical reverse recovery time (NOTE 1) trr 1.5 μs
Typical junction capacitance (NOTE 2) CJ 15.0 pF
Typical thermal resistance (NOTE 3) RQJA 55.0 °C/W
* Operating junction and storage temperature range TJ, TSTG -65 to +175
  SYMBOLS 1N5059 1N5060 1N5061 1N5062 UNITS
* Maximum repetitive peak reverse voltage VRRM 200 400 600 800 Volts
Maximum RMS voltage VRMS 140 280 420 560 Volts
* Maximum DC blocking voltage VDC 200 400 600 800 Volts

* Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C

I(AV) 1.0 Amp

* Peak forward surge current
8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM 50.0 Amps
* Maximum instantaneous forward voltage at 1.0A VF 1.2 Volts
* Maximum full Load reverse current, full cycle
average 0.375” (9.5mm) TA=25°C
lead length at TA=75°C
IR(AV) 5.0 μA
150 100
* Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=175°C
IR 5.0 μA
300 200
Typical reverse recovery time (NOTE 1) trr 1.5 μs
Typical junction capacitance (NOTE 2) CJ 15.0 pF
Typical thermal resistance (NOTE 3) RQJA 55.0 °C/W
* Operating junction and storage temperature range TJ, TSTG -65 to +175  ℃
¨ High temperature metallurgically bonded construction
¨ 1.0 Ampere operation at TA=75°C with no thermal runaway
¨ Typical IR less than 0.1mA
¨ Hermetically sealed package
¨ Glass passivated cavity-free junction
¨ Capable of meeting environmental standards of MIL-S-19500
¨ High temperature soldering guaranteed: 350°C/10 seconds 0.375” (9.5mm) lead length, 5 lbs. (2.3kg) tension

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1N5061GP GLASS PASSIVATED JUNCTION RECTIFIER 1N5061TAP POWER INDUCTORS (SMD Type)

Datasheet

Size: 182.79KB
Page: 2
PDF: 1N5060.pdf
  • Description:
    Silicon Rectifiers
  • MFG:
    DIOTEC [Diotec Semiconductor]
 

Abstract


1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlu?dr?hte in 10 mm Abstand von Geh?use auf Umgebungstemperatur gehalten werden
62 28.02.2002
1N 5059 ? 1N 5062
Silicon Rectifiers Silizium Gleichrichter
Nominal current ? Nennstrom 2 A
Repetitive peak reverse voltage 200?800 V
Periodische Spitzensperrspannung
Plastic case DO-15
Kunststoffgeh?use DO-204AC
Weight approx. ? Gewicht ca. 0.4 g
Plastic material has UL classification 94V-0
Geh?usematerial UL94V-0 klassifiziert
Dimensions / Ma?e in mm
Standard packaging taped in ammo pack see page 16
Standard Lieferform gegurtet in Ammo-Pack siehe Seite 16
Maximum ratings Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
Surge peak reverse voltage
Sto?spitzensperrspannung
V
RSM
[V]
1N 5059 200 200
1N 5060 400 400
1N 5061 600 600
1N 5062 800 800
Max. average forward rectified current, R-load T
A
= 25g47CI
FAV
2 A
1
)
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current f > 15 Hz I
FRM
10 A
1
)
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave T
A
= 25g47CI
FSM
50 A
Sto?strom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms T
A
= 25g47Ci
2
t 12.5 A
2
s
Grenzlastintegral, t < 10 ms
Operating junction temperature ? Sperrschichttemperatur T
j
? 50?+150g47C
Storage temperature ? Lagerungstemperatur T
S
? 50?+175g47C

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