28F256
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

Part Number:
Quantity:
Country/Region:
Email:
Description:
Code:
For complete your requirements, please fill in the part number,quantity and other contact details. So that more suppliers will contact you.
  Supplier Information Part Number Mfg Pack D/C Description Inquire

28F000PC SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 28F001
28F001BX-T120 Miniature Aluminum Electrolytic Capacitors 28F001N LED Indicator 8mm Recessed(Interior) Bezel Flashing
28F002 4 & 5 Tumbler 1-4 Pole Switchlocks 28F002B1 800mA Low Dropout Voltage Regulator
28F002B1-6T DUAL FREQUENCY VCXO (10 MHZ TO 1.4 GHZ) 28F002C1-8T 1 Mbit 128Kb x8 UV EPROM and OTP EPROM
28F002NTPC-12 Data Line Chokes for Telecommunications xDSL Transformers 28F004B POLYPHENYLENE SULFIDE FILM CAPACITORS
28F004B1-8 DA-TYPE SOCKET ASSEMBLIES 28F004B3-9 Quad bilateral switch
28F004B5 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 28F004B5-6
28F004B5-8 600mA LOW DROPOUT LINEAR REGULATOR 28F004B5B80 Ultra-Stable Precision High Voltage Resistors
28F004BV-B80 Envisium Power PLCC-4 Surface Mount LED 28F004SCT-L85 Silicon Power Rectifier Assemblies Plate Heatsink
28F004SCT-Z4 SOLID TANTALUM CHIP CAPACITORS 28F004SUT-21 Ultra Low Power CMOS SRAM 128K X 16 bit

Datasheet

Size: 493.47KB
Page: 35
PDF: 28F256.pdf
  • Description:
    256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
  • MFG:
    AMD [Advanced Micro Devices]
 

Abstract


FINAL
Publication# 11560 Rev: G Amendment/+2
Issue Date: January 1998
Am28F256
256 Kilobit (32 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
a73 High performance
— 70 ns maximum access time
a73 CMOS Low power consumption
— 30 mA maximum active current
— 100 ?A maximum standby current
— No data retention power consumption
a73 Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
a73 10,000 write/erase cycles minimum
a73 Write and erase voltage 12.0 V ±5%
a73 Latch-up protected to 100 mA
from –1 V to V
CC
+1 V
a73 Flasherase

Electrical Bulk Chip-Erase
— One second typical chip-erase
a73 Flashrite Programming
— 10 ?s typical byte-program
— 0.5 second typical chip program
a73 Command register architecture for
microprocessor/microcontroller compatible
write interface
a73 On-chip address and data latches
a73 Advanced CMOS flash memory technology
— Low cost single transistor memory cell
a73 Automatic write/erase pulse stop timer
GENERAL DESCRIPTION
The Am28F256 is a 256 K Flash memory organized as
32 Kbytes of 8 bits each. AMD’s Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory. The Am28F256 is
packaged in 32-pin PDIP, PLCC, and TSOP versions. It
is designed to be reprogrammed and erased in-system
or in standard EPROM programmers. The Am28F256
is erased when shipped from the factory.
The standard Am28F256 offers access times as fast as
70 ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the Am28F256 has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F256 uses a command register to manage this
functionality, while maintaining a standard JEDEC
Flash Standard 32-pin pinout. The command register
allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming.
AMD’s Flash technology reliably stores memory
contents even after 10,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The Am28F256
uses a 12.0V±5% V
PP
high voltage input to perform
the Flasherase

and Flashrite

algorithms.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up
protection is provided for stresses up to 100 milliamps
on address and data pins from –1 V to V
CC
+1 V.
The Am28F256 is byte programmable using 10 ?s
programming pulses in accordance with AMD’s
Flashrite programming algorithm. The typical room
temperature programming time of the Am28F256 is a
half a second. The entire chip is bulk erased using
10 ms erase pulses according to AMD’s Flasherase
alrogithm. Typical erasure at room temperature is
accomplished in less than one second. The windowed
package and the 15-20 minutes required for EPROM
erasure using ultra-violet light are eliminated.

Stock Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  All  
About Us  |  Contact us   |  Map  |  Link   |  Custom PCB Prototype Manufacturer
© 2008-2011 TradeOfic.com Corp.All Rights Reserved.