2SA1338
High-Speed Switching Applications

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Parameter Symbol Rating UNIT  
Collector-base voltage VCBO -60 V  
Collector-emitter voltage VCEO -50 V  
Emitter-base voltage VEBO -5 V  
Peak pulse current IC -500 mA  
Collector current (pulse) ICP -800 mA
Collector dissipation PC 200 mW  
Jumction temperature Tj 150  
Storage temperature Tstg -55 to +150  
·Adoption of FBET process.
·High breakdown voltage : VCEO=-50V.
·Large current capacitiy and high fT.
·Ultrasmall-sized package permitting sets
·to be smallsized, slim.

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Datasheet

Size: 131.73KB
Page: 4
PDF: 2SA1338.pdf
  • Description:
    High-Speed Switching Applications
  • MFG:
    SANYO [Sanyo Semicon Device]
 
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