2SC3734
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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Parameter Symbol Rating Unit  
Collector-Emitter Voltage VCEO 60 V  
Collector-Base Voltage VCBO 40 V  
Emitter-Base Voltage VEBO 6 V  
Collector Current - Continuous IC 200 mA  

Total Device Dissipation
at 25℃ ambient temperature

PT 200 mW  
Junction temperature TJ 150  
Storage temperature TSTG -55 to +150  
High speed : tstg <200ns.

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Datasheet

Size: 233.89KB
Page: 4
PDF: 2SC0829.pdf
  • Description:
    HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
  • MFG:
    NEC [NEC]
 
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