2SC5241
Switching Power Transistor(5A NPN)

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·With TO-220F package
·High voltage,high speed switching
·For switching regulator and general purpose applications
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base Voltage
Open emitter
600
V
VCEO
Collector-emitter Voltage
Open base
450
V
VEBO
Emitter-base Voltage
Open collector
7
V
IC
Collector Current
5
A
ICM
Collector current peak
10
A
IB
Base current  
2
A
IBM
Base current-peak
4
A
PT
Total power dissipation
Tc=25℃
30
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~150

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Datasheet

Size: 508.64KB
Page: 12
PDF: 2SC0829.pdf
  • Description:
    Switching Power Transistor(5A NPN)
  • MFG:
    SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
 

Abstract


Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : FTO-220
5A NPN
2SC5241
FX Series
Switching Power Transistor
●Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~1 50 ℃
Junction Temperature Tj 150 ℃
Collector to Base Voltage V
CBO
600 V
Collector to Emitter Voltage V
CEO
450 V
V
CEX
V
EB
= 5V 600
Emitter to Base Voltage V
EBO
7V
Collector Current DC I
C
5A
Collector Current Peak I
CP
10
Base Current DC I
B
2 A
Base Current Peak I
BP
4
Total Transistor Dissipation P
T
30 W
Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV
Mounting Torque TOR (Recommended torque) 0.5(0.3) N?m
●Electrical Characteristics (Tc=25℃)
Item Symbol Conditions Ratings Unit
Collector to Emitter Sustaining Voltage V
CEO
(sus) I
C
= 0.1A Min 450 V
Collector Cutoff Current I
CBO
rated V
CBO
Max 0.1 mA
I
CEO
rated V
CEO
Max 0.1
Emitter Cutoff Current I
EBO
rated V
EBO
Max 0.1 mA
DC Current Gain h
FE
V
CE
= 5V, I
C
= 2.5A Min 10
h
FEL
V
CE
= 5V, I
C
= 1mA Min 5
Collector to Emitter Saturation Voltage V
CE
(sat) I
C
= 2.5A Max 1.0 V
Base to Emitter Saturation Voltage V
BE
(sat) I
B
= 0.5A Max 1.5 V
Thermal Resistance θ jc Junction to case Max 4.16 ℃ /W
Transition Frequency f
T
V
CE
= 10V, I
C
= 0.5A STD 20 MHz
Turn on Time ton I
C
= 2.5A Max 0.5
Storage Time ts I
B1
= 0.5A, I
B2
= 1A Max 2.0 μ s
Fall Time tf R
L
= 60Ω , V
BB2
= 4V Max 0.2

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