3N190
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

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@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature                                -65 to +150 °C
Operating Junction Temperature               -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation One Side    300mW
Continuous Power Dissipation Both Sides  525mW
Maximum Current
Drain to Source2                                         50mA
Maximum Voltages
Drain to Gate2                                             30V
Drain to Source2                                          30V
Transient Gate to Source2,3                        ±125V
Gate to Gate                                                ±80V
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT    IGSS ≤ ±10pA
LOW TRANSFER CAPACITANCE    Crss ≤ 1.0pF

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3N102 3N103
3N104 3N105 7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays
3N106 Military DC-DC Power Supplies 3N107
3N108 32K X 8 High Speed CMOS Static RAM 3N109 7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays
3N110 3N111 IC for CMOS System Reset
3N112 FAST SOFT RECOVERY RECTIFIER DIODE 3N113
3N114 8-Bit CMOS ROM Based and OTP Microcontrollers with 8k to 32k Memory, Two Comparators and USART 3N115 Thick film thermal printhead (with thermal historical control)
3N116 LOW-DROPOUT VOLTAGE REGULATORS 3N117 MIL-STD-1553B NOTICE 2 ADVANCED INTEGRATED MUX HYBRIDS WITH ENHANCED RT FEATURES (AIM-HYer)
3N1171 Tantalum Surface Mount Capacitor 3N118 Silicon RF switches

Datasheet

Size: 27.48KB
Page: 2
PDF: 3N190.pdf
  • Description:
    Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
  • MFG:
    CALOGIC [Calogic, LLC]
 

Abstract


Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N190 / 3N191
FEATURES
?
Very High Input Impedance
?
High Gate Breakdown 3N190-3N191
?
Low Capacitance
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 1)
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
3N190-91 Hermetic TO-99 -55
o
C to +150
o
C
X3N190-91 Sorted Chips in Carriers -55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
2506
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL PARAMETER
3N190/91
UNITS TEST CONDITIONS
MIN MAX
IGSSR Gate Reverse Current 10
pA
VGS = 40V
IGSSF Gate Forward Current
-10 VGS = -40V
-25 TA = +125
o
C
BVDSS Drain-Source Breakdown Voltage -40
V
ID = -10?A
BVSDS Source-Drain Breakdown Voltage -40 IS = -10?A, VBD = 0
VGS(th) Threshold Voltage
-2.0 -5.0 VDS = -15V, ID = -10?A
-2.0 -5.0 VDS = VGS, ID = -10?A
VGS Gate Source Voltage -3.0 -6.5 VDS = -15V, ID = -500?A
IDSS Zero Gate Voltage Drain Current -200 VDS = -15V
ISDS Source Drain Current -400 VSD = -15V, VDB = 0
rDS(on) Drain-Source on Resistance 300 ohms VDS = -20V, ID = -100?A
ID(on) On Drain Current -5.0 -30.0 mA VDS = -15V, VGS = -10V

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