BAW56
Surface Mount Switching Diode

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Characteristic
Symbol
BAW56
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Note 1)
IFM
300
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RθJA
357
K/W
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150

• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automatic Insertion
• For General Purpose Switching Applications
• High Conductance

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Datasheet

Size: 101.36KB
Page: 2
PDF: BAW56.pdf
  • Description:
    Surface Mount Switching Diode
  • MFG:
    COMCHIP [Comchip Technology]
 

Abstract


www.comchip.com.tw
COMCHIP
SOT-23
Dimensions in inches (millimeters)
MDS0210001A Page 1
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.119 (3.0)
.020 (0.5) .020 (0.5)
Top View
.103 (2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.086 (2.2)
.0
3
5
(0
.
9
0
)
.020 (0.5)
.056 (
1
.4
0)
Rating Symbol Value Units
Continuous Reverse Voltage V
R
70 V
DC
Peak Forward Current I
F
215 mAdc
Peak Forward Surge Current I
FM
(surge) 500 mAdc
Characteristic Symbol Max Units
Total Device Dissipation FR– 5 Board(1) T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
 JA
556 °C/W
Total Device Dissipation Alumina Substrate,(2) T
A
= 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient
R
 JA 417
°C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
Characteristic (OFF CHARACTERISTICS) Symbol Min Max Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc ) V
(BR) 70
- Vdc
Reverse Voltage Leakage Current V
R
= 25 Vdc, T
J
= 150°C
- 30
V
R
= 70 Vdc
- 2.5
V
R
= 70 Vdc, T
J
= 150°C
- 50
Diode Capacitance (V
R
= 0, f = 1.0 MHz))
C
D 1.5
pF
Forward Voltage I
F
= 1.0 mAdc
- 715
I
F
= 10 mAdc
- 855
I
F
= 50 mAdc
- 1000
I
F
= 150 mAdc
- 1250
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) R
L
= 100
Trr
6.0 nS
mV
1.FR–5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
P
D
Electrical Characterics (TA = 25°C unless otherwise noted)
I
R
VF
Maximum Ratings
Thermal Characteristics
P
D
uAdc
CATHODE
1
2
BAV99
ANODE
CATHODE
3
ANODE
1
2
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
BAL99
BAW56BAV70
3
21
Voltage: 70 Volts
Current: 215mA
BAV99 Thru BAW56
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
For General PurposeSwitching Applications
High Conductance
Mechanical data
Case: SOT -23, Plastic
Approx. Weight: 0.008 gram
This diodes is also available in other
a dual
chip inside withtype
configurations including a dual common
cathode with type designation BAV70,
common anodes with type designation
BAW56 andsingle
Designation BAL99
Surface Mount Switching Diode

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