BC847B
General Purpose Transistors

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Parameter Symbol Limits Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 45 V
Emitter-base voltage VEBO 6 V
Collector current IC 0.1 A
Collector power dissipation PC 0.2 W *
0.35
Junction temperature Tj 150 °C
Storage temperature Tstg −55~+150 °C
* When mounted on a 7×5×0.6mm ceramic board.
1) BVCEO < 45V (IC=1mA)
2) Complements the BC857B.

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Datasheet

Size: 194.55KB
Page: 4
PDF: BC847B.pdf
  • Description:
    General Purpose Transistors
  • MFG:
    ETL [E-Tech Electronics LTD]
 

Abstract


M3–1/4
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
BC847 BC848
Rating
Symbol BC846 BC850 BC849 Unit
Collector–Emitter Voltage V
CEO
65 45 30 V
Collector–Base Voltage V
CBO
80 50 30 V
Emitter–Base Voltage V
EBO
6.0 6.0 5.0 V
Collector Current — Continuous I
C
100 100 100 mAdc
Collector Current(Peak value) I
CM
200 200 200 mAdc
Emitter Current(Peak value) I
EM
200 200 200 mAdc
Base Current(Peak value) I
BM
200 200 200 mAdc
SOLDERING CHARACTERISTICS
Characteristic Symbol Unit
Solder Heat Resistance 265 °C
Solderability 240 to 265 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
Alumina Substrate, (2) T
A
= 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC846A,B 65 — —
(I
C
= 10 mA) BC847A,B,C, BC850B,C V
(BR)CEO
45 — — v
BC848A,B,C, BC849B,C 30 — —
Collector–Emitter Breakdown Voltage BC846A,B 80 — —
(I
C
= 10 ?A, V
EB
= 0) BC847A,B,C, BC850B,C V
(BR)CES
50 — — v
BC848A,B,C, BC849B,C 30 — —
Collector–Base Breakdown Voltage BC846A,B 80 — —
(I
C
= 10 ?A) BC847A,B,C, BC850B,C V
(BR)CBO
50 — — v
BC848A,B,C, BC849B,C 30 — —
Emitter–Base Breakdown Voltage BC846A,B BC847A,B,C 6.0
(I
E
= 1.0 ?A) BC848A,B,C, BC849B,C, V
(BR)EBO
5.0
BC850B,C 5.0
Collector Cutoff Current (V
CB
= 30 V)
I
CBO
——15nA
(V
CB
= 30 V, T
A
= 150°C) — — 5.0 ?A
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
1
3
2

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