BFN17
PNP Silicon High-Voltage Transistors

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Parameter Symbol Values Unit
BFN 17 BFN 19
Collector-emitter voltage VCE0 250 300 V
Collector-base voltage VCB0 250 300
Emitter-base voltage VEB0 5
Collector current IC 200 mA
Peak collector current ICM 500
Base current IB 100
Peak base current IBM 200
Total power dissipation, TS = 130 ℃ Ptot 1 W
Junction temperature Tj 150
Storage temperature range Tstg – 65 … + 150
·Suitable for video output stages in TV sets and switching power supplies
·High breakdown voltage
·Low collector-emitter saturation voltage
·Complementary types: BFN 16, BFN 18 (NPN)

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Datasheet

Size: 47.96KB
Page: 5
PDF: BFN17.pdf
  • Description:
    PNP Silicon High-Voltage Transistors
  • MFG:
    INFINEON [Infineon Technologies AG]
 

Abstract


BFN17, BFN19
Nov-30-20011
PNP Silicon High-Voltage Transistors
G01 Suitable for video output stages in TV sets and
switching power supplies
G01 High breakdown voltage
G01 Low collector-emitter saturation voltage
G01 Complementary types: BFN16, BFN18 (NPN)
2
1
3
VPS05162
2
Type Marking Pin Configuration Package
BFN17
BFN19
DG
DH
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
SOT89
SOT89
Maximum Ratings
Parameter Symbol
BFN17 BFN19
Unit
Collector-emitter voltage V
CEO
250 300 V
Collector-base voltage V
CBO
250 300
Emitter-base voltage V
EBO
5 5
DC collector current I
C
200 mA
500I
CM
Peak collector current
Base current I
B
100
I
BM
200Peak base current
WP
tot
Total power dissipation, T
S
= 130 °C 1
Junction temperature 150 °CT
j
T
stg
-65 ... 150Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0120 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance

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