BUT11AX
Silicon Diffused Power Transistor

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High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V  - 1000 V
VCEO Collector-emitter voltage (open base)    - 450 V
IC Emitter-base voltage(open collector)    - 5 V
ICM Collector current (DC)    - 10 A
IB Base current (DC)    - 2 A
IBM Base current peak value    - 4 A
Ptot Total power dissipation Tmb ≤25℃  - 32 W
Tstg Storage temperature   -65 150
Tj Junction temperature    - 150

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Datasheet

Size: 118.59KB
Page: 8
PDF: BUT11AX.pdf
  • Description:
    Silicon Diffused Power Transistor
  • MFG:
    PHILIPS [Philips Semiconductors]
 

Abstract


Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT11AX
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
P
tot
Total power dissipation T
hs
≤ 25 ?C - 32 W
V
CEsat
Collector-emitter saturation voltage - 1.5 V
I
Csat
Collector saturation current 2.5 - A
t
f
Fall time 150 - ns
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0 V - 1000 V
V
CEO
Collector-emitter voltage (open base) - 450 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
I
B
Base current (DC) - 2 A
I
BM
Base current peak value - 4 A
P
tot
Total power dissipation T
hs
≤ 25 ?C - 32 W
T
stg
Storage temperature -65 150 ?C
T
j
Junction temperature - 150 ?C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
Junction to heatsink with heatsink compound - 3.95 K/W
R
th j-a
Junction to ambient in free air 55 - K/W
123
case
b
c
e
November 1995 1 Rev 1.100

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