CXK5T16100TM-12LLX
65536-word x 16-bit High Speed CMOS Static RAM

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Datasheet

Size: 138.62KB
Page: 10
PDF: CXK5T16100TM-12LLX.pdf
  • Description:
    65536-word x 16-bit High Speed CMOS Static RAM
  • MFG:
    SONY [Sony Corporation]
 

Abstract


– 1 –
CXK5T16100TM -12LLX
PE96405-ST
65536-word · 16-bit High Speed CMOS Static RAM
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Description
The CXK5T16100TM is a general purpose high
speed CMOS static RAM organized as 65536-
words by 16-bits.
Special feature are low power consumption and
high speed.
The CXK5T16100TM is a suitable RAM for portable
equipment with battery back up.
Features
? Extended operating temperature range: –25 to +85°C
? Wide supply voltage range operation: 2.7 to 3.6V
? Fast access time: (Access time)
3.0V operation 120ns (max.)
3.3V operation 100ns (max.)
? Low power consumption operation:
Standby / DC operation
1.6?W (typ.) / 3.3mW (typ.)
100?W (max.) / 11mW (max.)
? Fully static memory ··· No clock or timing strobe
required
? Equal access and cycle time
? Common data input and output: three state output
? Directly LVTTL compatible: All inputs and outputs
? Low voltage data retention: 2.0V (min.)
? 400mil 44pin TSOP (type II) package
Function
65536-word x 16-bit static RAM
Structure
Silicon gate CMOS IC
Block Diagram
A13
A12
A11
A10
A9
A8
Row
Decoder
Memory
Matrix
512 × 1024
I/O Gate
Column
Decoder
I/O Buffer
I/O9 I/O16
A1
A0
A7
A6
A5
A4
A3
A2
A14
WE
OE
CE
A15
Memory
Matrix
512 × 1024
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O8
UB
LB
Control
Vcc
GND
Vcc
GND
Pre
Decoder
Buffer
Buffer
44 pin TSOP (PIastic)
Preliminary

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