FQB2P40
400V P-Channel MOSFET

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These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

Symbol Parameter
FQB2P40 / FQI2P40
Units
VDSS Drain-Source Voltage
-400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-2.0
A
-1.27
A
IDM Drain Current - Pulsed (Note 1)
-8.0
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
120
mJ
IAR Avalanche Current (Note 1)
-2.0
A
EAR Repetitive Avalanche Energy (Note 1)
6.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
63
W
0.51
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
• -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Datasheet

Size: 586.58KB
Page: 9
PDF: FQB2P40.pdf
  • Description:
    400V P-Channel MOSFET
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


?2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
FQB2P
40 /

F
Q
I2P
4
0
QFET
TM
FQB2P40 / FQI2P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
Features
-2.0A, -400V, R
DS(on)
= 6.5? @V
GS
= -10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 6.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQB2P40 / FQI2P40 Units
V
DSS
Drain-Source Voltage -400 V
I
D
Drain Current - Continuous (T
C
= 25°C) -2.0 A
- Continuous (T
C
= 100°C) -1.27 A
I
DM
Drain Current - Pulsed (Note 1) -8.0 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 120 mJ
I
AR
Avalanche Current (Note 1) -2.0 A
E
AR
Repetitive Avalanche Energy (Note 1) 6.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns
P
D
Power Dissipation (T
A
= 25°C) * 3.13 W
Power Dissipation (T
C
= 25°C) 63 W
- Derate above 25°C 0.51 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.98 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
SD



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