FQPF4N20
200V N-Channel MOSFET

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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

Symbol
Parameter
FQPF4N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
2.8
A
1.6
A
IDM
Drain Current - Pulsed                (Note 1)
11.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy         (Note 2) 
52
mJ
IAR
Avalanche Current                      (Note 1)
2.8
A
EAR
Repetitive Avalanche Energy            (Note 1)                                        
2.7
mJ
dv/dt
Peak Diode Recovery dv/dt              (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
27
W
 
0.22
W/℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C
• 2.8A, 200V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical  5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Datasheet

Size: 726KB
Page: 8
PDF: FQPF4N20.pdf
  • Description:
    200V N-Channel MOSFET
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


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G2A
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