FZT1048A
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Parameter Symbol Rating UNIT  
Collector-base voltage VCBO 50 V  
Collector-emitter voltage VCEO 17.5 V  
Emitter-base voltage VEBO 5 V  
Peak pulse current IC 5 A  
Continuous collector current ICM 20 A
Base current IB 500 mA
Power dissipation PTOT 2.5 W  
Storage temperature Tj , Tstg -55 to + 150  
·VCEO = 17.5V.
·5 Amp continuous current.
·20 Amp pulse current.
·Low saturation voltage.
·High gain.
·Extremely low equivalent on-resistance; RCE(sat) = 50mÙ at 5A.

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Datasheet

Size: 132.01KB
Page: 3
PDF: FZT1048A.pdf
  • Description:
    NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
  • MFG:
    ZETEX [Zetex Semiconductors]
 

Abstract


SOT223
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997
FEATURES
*V
CEO
= 17.5V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
CE(sat)
= 50m? at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
17.5 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
5 A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C ? P
tot
2.5 W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
? The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1048A
C
C
E
B

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