GA300TD60U
HALF-BRIDGE IGBT DUAL INT-A-PAK

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• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,  SMPS, Welding
• Lower EMI, requires less snubbing
  Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC=25°C Continuous Collector Current 300 A
ICM Pulsed Collector Current 600
ILM Clamped Inductive Load Current 600
IFM Peak Diode Forward Current 600
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 155 mJ
VISOL RMS Isolation Voltage, Any Terminal to Case, t=1 min 2500 V
PD @ TC=25°C Maximum Power Dissipation 880 W
PD @ TC=85°C Maximum Power Dissipation

460

TJ Operating Junction -40 to + 150 °C
TSTG Storage Temperature Range -40 to + 125
• Generation 4 IGBT technology
• UltraFast:  Optimized for high operating  frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved

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Datasheet

Size: 242.57KB
Page: 10
PDF: GA300TD60U.pdf
  • Description:
    HALF-BRIDGE IGBT DUAL INT-A-PAK
  • MFG:
    IRF [International Rectifier]
 

Abstract


05/14/02
GA300TD60U
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
V
CES
= 600V
V
CE(on) typ.

= 1.80V
@V
GE
= 15V, I
C
= 300A
Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case - IGBT — 0.14
R
θJC
Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W
R
θCS
Thermal Resistance, Case-to-Sink - Module 0.1 —
Mounting Torque, Case-to-Heatsink G83 — 6.0 N m
Mounting Torque, Case-to-Terminal 1, 2 & 3G83 — 5.0
Weight of Module 400 — g
Thermal / Mechanical Characteristics
Ultra-Fast
TM
Speed IGBT
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 300
I
CM
Pulsed Collector Current 600 A
I
LM
Peak Switching Current? 600
I
FM
Peak Diode Forward Current 600
V
GE
Gate-to-Emitter Voltage ±20 V
V
ISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500
P
D
@ T
C
= 25°C Maximum Power Dissipation 880 W
P
D
@ T
C
= 85°C Maximum Power Dissipation 460
T
J
Operating Junction Temperature Range -40 to +150 °C
T
STG
Storage Temperature Range -40 to +125
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED
?
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
Generation 4 IGBT technology
.
www.irf.com 1
PD -50057E

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