IR2101
HIGH AND LOW SIDE DRIVER

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The IR2101/IR21014/IR2102/IR21024 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Symbol Definition Min. Max.
Units
VB High side floating supply voltage -0.3 625 V
VS High side floating supply offset voltage VB - 25
VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3
VCC Low side and logic fixed supply voltage -0.3 25
VLO Low side output voltage -0.3 VCC + 0.3
VIN Logic input voltage (HIN & LIN) -0.3 VCC + 0.3
dVS/dt Allowable offset supply voltage transient 50 V/ns
PD Package power dissipation @ TA +25 (8 lead PDIP) 1.0 W
(8 lead SOIC) 0.625
(14 lead PDIP) 1.6
(14 lead SOIC) 1.0
RthJA Thermal resistance, junction to ambient (8 lead PDIP) 125 ℃/W
(8 lead SOIC) 200
(14 lead PDIP) 75
(14 lead SOIC) 120
TJ Junction temperature 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) 300
· Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout
· 5V Schmitt-triggered input logic
· Matched propagation delay for both channels
· Outputs in phase with inputs (IR2101/IR21014) or out of phase with inputs (IR2102/IR21024)

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Datasheet

Size: 396.22KB
Page: 6
PDF: IR2101.pdf
  • Description:
    HIGH AND LOW SIDE DRIVER
  • MFG:
    IRF [International Rectifier]
 

Abstract


Data Sheet No. PD-6.043C
IR2101
Typical Connection
Features
nFloating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
nGate drive supply range from 10 to 20V
nUndervoltage lockout
n5V Schmitt-triggered input logic
nMatched propagation delay for both channels
nOutputs in phase with inputs
Description
The IR2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is com-
patible with standard CMOS or LSTTL outputs. The
output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configura-
tion which operates up to 600 volts.
HIGH AND LOW SIDE DRIVER
Packages
Product Summary
V
OFFSET
600V max.
I
O
+/- 100 mA / 210 mA
V
OUT
10 - 20V
t
on/off
(typ.) 130 & 90 ns
Delay Matching 30 ns
V
CC
V
B
V
S
HO
LOCOM
HIN
LINLIN
HIN
up to 600V
TO
LOAD
V
CC
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-1

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