IRF034
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

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The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very low on-state resi tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

  Parameter Max. Units
ID @ VGS =0V TC =25℃ Continuous Drain Current 25 A
ID @ VGS =0V TC =100℃ Continuous Drain Current 16
IDM Pulsed Drain Current ① 100
PD @ TC =100℃ Max. Power Dissipation 75 W
  Linear Derating Factor 0.60 W/℃
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ② 19 mJ
IAR Avalanche Current ① - A
EAR Repetitive Avalanche Energy ① - mJ
dv/dt Peak Diode Recovery dv/dt ③ 4.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 150
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
  Weight 11.5(typical) g
·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling

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Datasheet

Size: 144.06KB
Page: 7
PDF: IRF034.pdf
  • Description:
    REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
  • MFG:
    IRF [International Rectifier]
 

Abstract


Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 25
I
D
@ V
GS
= 0V, T
C
= 100°C Continuous Drain Current 16
I
DM
Pulsed Drain Current ? 100
P
D
@ T
C
= 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ? 19 mJ
I
AR
Avalanche Current ? -A
E
AR
Repetitive Avalanche Energy ? -m
dv/dt Peak Diode Recovery dv/dt ? 4.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
PD - 90585
The HEXFET
?
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED IRF034
HEXFET
?
TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/23/01
www.irf.com 1
60V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS RDS(on) ID
IRF034 60V 0.050? 25Α
Features:
G6E Repetitive Avalanche Ratings
G6E Dynamic dv/dt Rating
G6E Hermetically Sealed
G6E Simple Drive Requirements
G6E Ease of Paralleling
For footnotes refer to the last page

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