IRF044
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

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VGS Gate - Source Voltag ±20
ID Continuous Drain Current(VGS = 0 , Tcase = 25℃
44A
ID Continuous Drain Current(VGS = 0 , Tcase = 100℃ 27A
IDM PulsedDrain Current 1 176A
PD Power Dissipation @ Tcase = 25℃
125W
  Linear Derating Factor 1.0W/℃
EAS Single Pulse Avalanche Energy 2 340mJ
dv/dt Peak Diode Recovery 3 4.5V/ns
TJ , Tstg Operating and Storage Temperature Range -55 to 150℃
TL Lead Temperature 1.6mm (0.63’’) from case for10 sec 300℃
· HERMETICALLY SEALED TO¨C3 META PACKAGE
· SIMPLE DRIVE REQUIREMENTS
· SCREENING OPTIONS AVAILABLE

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Datasheet

Size: 146.64KB
Page: 7
PDF: IRF044.pdf
  • Description:
    REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
  • MFG:
    IRF [International Rectifier]
 

Abstract


Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 44
I
D
@ V
GS
= 0V, T
C
= 100°C Continuous Drain Current 27
I
DM
Pulsed Drain Current ? 176
P
D
@ T
C
= 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ? 340 mJ
I
AR
Avalanche Current ? -A
E
AR
Repetitive Avalanche Energy ? -m
dv/dt Peak Diode Recovery dv/dt ? 4.5 V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
PD - 90584
The HEXFET
?
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED IRF044
HEXFET
?
TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/24/01
www.irf.com 1
60V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS RDS(on) ID
IRF044 60V 0.028 ? 44Α
Features:
G6E Repetitive Avalanche Ratings
G6E Dynamic dv/dt Rating
G6E Hermetically Sealed
G6E Simple Drive Requirements
G6E Ease of Paralleling
For footnotes refer to the last page

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