IRF2807PBF
Advanced Process Technology

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Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

  Parameter
Max.
Units
ID @ TC = 25℃ Continuous Drain Current,VGS @ 10V
82
A
ID @ TC = 100℃ Continuous Drain Current,VGS @ 10V
58
IDM Pulsed Drain Current
280
PD @ TC = 25℃ Max. Power Dissipation
230
W
  Linear Derating Factor
1.5
W/℃
VGS Gate-to-Source Voltage
±20
V
IAR Avalanche Current
43
A
EAR Repetitive Avalanche Energy
23
mJ
dv/dt Peak Diode Recovery dv/dt
5.9
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds
300 ( for 5s)
  Mounting torque, 6-32 or M3 srew
10 lbf·in (1.1N·m)

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175 Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free

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Datasheet

Size: 192.22KB
Page: 8
PDF: IRF034.pdf
  • Description:
    Advanced Process Technology
  • MFG:
    IRF [International Rectifier]
 

Abstract


IRF2807PbF
HEXFET
?
Power MOSFET
G48G50G47G48G50G47G48G52
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ??? 0.65
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ??? °C/W
R
θJA
Junction-to-Ambient ??? 62
Thermal Resistance
www.irf.com 1
V
DSS
= 75V
R
DS(on)
= 13m?
I
D
= 82AG135
S
D
G
TO-220AB
Advanced HEXFET
?
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
G108 Advanced Process Technology
G108 Ultra Low On-Resistance
G108 Dynamic dv/dt Rating
G108 175°C Operating Temperature
G108 Fast Switching
G108 Fully Avalanche Rated
G108 Lead-Free
Description
PD - 94970
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 82G135
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 58 A
I
DM
Pulsed Drain Current G129 280
P
D
@T
C
= 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche CurrentG129 43 A
E
AR
Repetitive Avalanche EnergyG129 23 mJ
dv/dt Peak Diode Recovery dv/dt G131 5.9 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf?in (1.1N?m)

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