IRF7103
Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

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Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

  Parameter Max. Units
ID @ TC = 25℃ Continuous Drain Current, VGS @ 4.5V 3.0 A
ID @ TC = 70℃ Continuous Drain Current, VGS @ 4.5V 2.3
IDM Pulsed Drain Current ① 10
PD @TC = 25℃ Power Dissipation 2.0 W
  Linear Derating Factor 0.016 mW/℃
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ② 4.5 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150
* Adavanced Process Technology
* Ultra Low On-Resistance
* Dual N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching

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Datasheet

Size: 169.18KB
Page: 9
PDF: IRF7103.pdf
  • Description:
    Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)
  • MFG:
    IRF [International Rectifier]
 

Abstract


HEXFET
?
Power MOSFET
PD - 9.1095B
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7103
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
81
2
3
4 5
6
7
V
DSS
= 50V
R
DS(on)
= 0.130?
I
D
= 3.0A
8/25/97
Parameter Min. Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient –––

–––

62.5 °C/W
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 3.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 2.3
I
DM
Pulsed Drain Current 10
P
D
@T
C
= 25°C Power Dissipation 2.0
Linear Derating Factor 0.016 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 4.5 V/nS
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150
Absolute Maximum Ratings
A
Thermal Resistance Ratings
W
°C

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