IRF7309
HEXFET Power MOSFET

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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

  Parameter N-Channel Max.P-Channel Units
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V  4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V  4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 3.2 -2.4 A
IDM Pulsed Drain Current 16 -12 A
PD @TA = 25°C Maximum Power Dissipation 14 W
  Linear Derating Factor 0.011 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

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Datasheet

Size: 162.21KB
Page: 8
PDF: IRF7309.pdf
  • Description:
    HEXFET Power MOSFET
  • MFG:
    IRF [International Rectifier]
 

Abstract


Parameter Max. Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 10V 4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.2 -2.4 A
IDM Pulsed Drain Current 16 -12 A
PD @TA = 25°C Power Dissipation (PCB Mount)** 1.4 W
Linear Derating Factor (PCB Mount)** 0.011 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7309
HEXFET? Power MOSFET
PD - 9.1243B
Description
PRELIMINARY
Absolute Maximum Ratings
SO-8
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)** –––– –––– 90 °C/W
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
81
2
3
4 5
6
7
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.050? 0.10?
147

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