Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 10V 4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.2 -2.4 A
IDM Pulsed Drain Current 16 -12 A
PD @TA = 25°C Power Dissipation (PCB Mount)** 1.4 W
Linear Derating Factor (PCB Mount)** 0.011 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
HEXFET? Power MOSFET
PD - 9.1243B
Absolute Maximum Ratings
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)** –––– –––– 90 °C/W
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Available in Tape & Reel
Dynamic dv/dt Rating
VDSS 30V -30V
RDS(on) 0.050? 0.10?