JAN2N6284
NPN DARLINGTON POWER SILICON TRANSISTOR

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Datasheet

Size: 64.63KB
Page: 2
PDF: JAN2N6284.pdf
  • Description:
    NPN DARLINGTON POWER SILICON TRANSISTOR
  • MFG:
    MICROSEMI [Microsemi Corporation]
 

Abstract


TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/504
Devices Qualified Level
2N6283 2N6284




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6583 2N6284 Unit
Collector - Emitter Voltage V CEO 80 100 Vdc
Col lector - Base Voltage V CBO 80 100 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 0.5 Adc
Collector Current I C 20 Adc
Total Power Dissipation (1) @ T C = +25 0 C
@ T C = +100 0 C P T
175
87.5
W
W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 0.857 0 C/W
1) Derate linearly @ 1.17 W/ 0 C above T C > +25 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 100 mAdc 2N6283
2N6284

V (BR) CEO

80
100

Vdc
Collector - Emitter Cutoff Current
V CE = 40 Vdc 2N6283
V CE = 50 Vdc 2N628 4

I CEO

1.0
1.0

mAdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc, V BE = 1.5 Vdc 2N6283
V CE = 100 Vdc, V BE = 1.5 Vdc 2N6284

I CEX

5.0
5.0

mAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc I EBO 2.5 mAdc

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