JANTX2N5039
NPN HIGH POWER SILICON TRANSISTOR

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Datasheet

Size: 55.42KB
Page: 2
PDF: JAN-03.pdf
  • Description:
    NPN HIGH POWER SILICON TRANSISTOR
  • MFG:
    MICROSEMI [Microsemi Corporation]
 

Abstract


TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices Qualified Level
2N5038 2N5039




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5038 2N5039 Units
Collector - Emitter Voltage V CEO 90 75 Vdc
Collector - Base Voltage V CBO 150 125 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 5.0 Adc
Collector Current I C 20 Adc
Total Power Dissipation @ T C = +25 0 C (1) P T 140 W
Operating & Storage Temperature Range T op , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.25 0 C/W
1) Derate linearly 800 mW/ 0 C for T C > +25 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc 2N5038
2N5039

V (BR) CEO


90
75

Vdc
Emitter - Base Breakdown Voltage
I E = 25 mAdc V (BR) EBO 7.0 Vdc
Collector - Base Cutoff Current
V CE = 150 Vdc 2 N5038
V CE = 125 Vdc 2N5039

I CBO

1.0
1.0

?Adc
Collector - Base Cutoff Current
V CE = 70 Vdc 2N5038
V CE = 55 Vdc 2N5039

I CEO

1.0
1.0

?Adc
Emitter - Base Cutoff Current
V EB = 5.0 Vdc I EBO 1.0 ?Adc
Collector - Emitter Cutoff Current
V BE = - 1.5 Vdc V CE = 100 Vdc 2N5038
V BE = - 1.5 Vdc V CE = 85 Vdc 2N5039

I CEX

5.0
5.0

?Adc

6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
120101
Page 1 of 2





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