JANTX2N6782
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)

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Parameter
JANTX2N6782, JANTXV2N6782
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
3.5
A
ID @ VGS = 10V, TC = 100°C
Continuous Drain Current
2.25
IDM
Pulsed Drain Current
14
PD @ TC = 25°C
Max. Power Dissipation
15
W
Linear Derating Factor
0.12
W/K⑤
VGS
Gate-to-Source Voltage
±20
V
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight

11.5 ( Typical )

g

● Avalanche Energy Rating
● Dynamic dv/dt Rating
● Simple Drive Requirements
● Ease of Paralleling
● Hermetically Sealed

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Datasheet

Size: 232.25KB
Page: 6
PDF: JANTX2N6782.pdf
  • Description:
    POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
  • MFG:
    IRF [International Rectifier]
 

Abstract


Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6782
JANTXV2N6782
Features:
a73 Avalanche Energy Rating
a73 Dynamic dv/dt Rating
a73 Simple Drive Requirements
a73 Ease of Paralleling
a73 Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.423B
100 Volt, 0.60? HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6782
JANTXV2N6782
[REF:MIL-PRF-19500/556]
[GENERIC:IRFF110]
HEXFET
?
POWER MOSFET
Absolute Maximum Ratings
Parameter JANTX2N6782, JANTXV2N6782 Units
I
D
@ V
GS
= 10V, T
C
= 25°C Continuous Drain Current 3.5
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 2.25
I
DM
Pulsed Drain Current a140 14
P
D
@ T
C
= 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/K a144
V
GS
Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt a142 5.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300
(0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight 0.98 (typical) g
o
C
A
3.5A0.60?100V

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