KSP94
High Voltage Transistor

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Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V
VCEO Collector-Emitter Voltage -400 V
VCEO Emitter-Base Voltage -6 V
IC Collector Current -300 mA
PC Collector Power Dissipation
625 mW
TJ Junction Temperature 150 oC
TSTG Storage Temperature -55~150 oC

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Datasheet

Size: 70KB
Page: 5
PDF: KSP94.pdf
  • Description:
    High Voltage Transistor
  • MFG:
    FAIRCHILD [Fairchild Semiconductor]
 

Abstract


?2002 Fairchild Semiconductor Corporation Rev. A2, July 2002
KSP
9
4
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -400 V
V
CEO
Collector-Emitter Voltage -400 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current -300 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55~150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100?A, I
E
=0 -400 V
BV
CES
Collector-Emitter Breakdown Voltage I
C
= -100?A, V
BE
=0 -400 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10?A, I
C
=0 -6 V
I
CBO
Collector Cut-off Current V
CB
= -300V, V
E
=0 -100 nA
I
CES
Collector Cut-off Current V
CE
= -400V, V
BE
=0V -1 ?A
I
EBO
Emitter Cut-off Current V
BE
= -4V, I
C
=0 -100 nA
h
FE1
h
FE2
h
FE3
h
FE4
DC Current Gain V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
40
50
45
40
300
V
CE
(sat)
1
V
CE
(sat)
2
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
-500
-750
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA -750 mV
C
ob
Output Capacitance V
CB
= -20V, I
E
=0, f=1MHz 7 pF
KSP94
High Voltage Transistor
? High Collector-Emitter Voltage: V
CEO
= -400V
? Low Collector-Emitter Saturation Voltage
? Complement to KSP44
1. Emitter 2. Base 3. Collector
TO-92
1

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