MRF18060A
RF POWER FIELD EFFECT TRANSISTORS

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Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
   Power Gain — 13 dB (Typ) @ 60 Watts
   Efficiency — 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
  13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
  40µ″ Nominal.
Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C PD

180 1.03

Watts
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C

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Datasheet

Size: 405.18KB
Page: 8
PDF: MRF18060A.pdf
  • Description:
    RF POWER FIELD EFFECT TRANSISTORS
  • MFG:
    MOTOROLA [Motorola, Inc]
 

Abstract


1
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3MOTOROLA RF DEVICE DATA
The RF MOSFET Line
C0082C0070 C0080C0111C0119C0101C0114 C0070C0105C0101C0108C0100 C0069C0102C0102C0101C0099C0116 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
? Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
? Internally Matched, Controlled Q, for Ease of Use
? High Gain, High Efficiency and High Linearity
? Integrated ESD Protection
? Designed for Maximum Gain and Insertion Phase Flatness
? Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
? Excellent Thermal Stability
? Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
? Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40?″ Nominal.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
65 Vdc
Gate–Source Voltage V
GS
–0.5, +15 Vdc
Total Device Dissipation @ T
C
≥ 25°C
Derate above 25°C
P
D
180
1.03
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Operating Junction Temperature T
J
200 °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
0.97 °C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18060A/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0077C0082C0070C0049C0056C0048C0054C0048C0065
C0077C0082C0070C0049C0056C0048C0054C0048C0065C0082C0051
C0077C0082C0070C0049C0056C0048C0054C0048C0065C0076C0083C0082C0051
C0077C0082C0070C0049C0056C0048C0054C0048C0065C0083C0082C0051
1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18060A
CASE 465A–06, STYLE 1
NI–780S
MRF18060ALSR3, MRF18060ASR3
? Motorola, Inc. 2002
REV 5

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