RFP12N20
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

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These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

  RFM12N18 RFM12N20 RFP18N18 RFM12N20 UNITS
Drain to Source Voltage (Note 1) VDSS 180 200 180 200 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 180 200 180 200 V
Continuous Drain Current ID 12 12 12 12 A
Pulsed Drain Current (Note 3) IDM 30 30 30 30 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 75 75 60 60 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.8 0.8 0.8 0.8 W/oC
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 o C
• 12A, 180V and 200V
• rDS(ON) = 0.250W
• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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RFP1031-10R/2 7.6 mm (0.3 inch) Micro Bright Seven Segment Displays RFP10-33RVS QUADRUPLE 2-INPUT POSITIVE-AND GATES
RFP10-38RV RFP-10-50TV Flanged Terminations
RFP10-50TV RFP10-50TVC MEMORY SPECTRUM
RFP10-50TVR 512 Kbit 64Kb x8 UV EPROM and OTP EPROM RFP1065-0R6 Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs

Datasheet

Size: 35.64KB
Page: 4
PDF: RFP12N20.pdf
  • Description:
    12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
  • MFG:
    INTERSIL [Intersil Corporation]
 

Abstract


5-1
Semiconductor
September 1998
Features
? 12A, 180V and 200V
?r
DS(ON)
= 0.250?
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09293.
Symbol
Packaging
JEDEC TO-204AA JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
RFM12N18 TO-204AA RFM12N18
RFM12N20 TO-204AA RFM12N20
RFP12N18 TO-220AB RFP12N18
RFP12N20 TO-220AB RFP12N20
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright ? Harris Corporation 1998
File Number 1461.2
RFM12N18, RFM12N20,
RFP12N18, RFP12N20
12A, 180V and 200V, 0.250 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N18,
RFM12
N20,
RFP12N
18,
RFP12N
20)
/Subject
(12A,
180V
and
200V,
0.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN

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