SW-314
GaAs SP4T Absorptive Switch, DC - 3 GHz

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M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314 is ideally suited for RF/IF communications applications. Environmental screening is available. Contact the factory for information.

Parameter
Absolute Maximum

Max Input Power
50 MHz
500 - 2000 MHz4


+27 dBm
+34 dBm

Supply Voltages
Vcc
Vee


-0.5 to +5.5V
-8.5V to +0.5V

Control Voltage 5
-0.5V, to Vcc +0.5V
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C

3. Operation of this device above any one of these parameters may cause permanent damage.
4. When the input power is applied to the terminated port, the absolute maximum is +30 dBm.
5. Standard CMOS TTL interface, latch-up will occur if logic signal is applied prior to power supply.
■ Integral TTL Driver
■ Isolation: 50 dB Typ. At 1 GHz
■ Ultra Low DC Power Consumption
■ Hermetic Surface Mount Package
■ 50 Ohms Nominal Impedance
■ MIL-STD-883 Screening Available

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Datasheet

Size: 229.23KB
Page: 3
PDF: SW-314.pdf
  • Description:
    GaAs SP4T Absorptive Switch, DC - 3 GHz
  • MFG:
    MACOM [Tyco Electronics]
 

Abstract


GaAs SP4T Absorptive Switch,
DC - 3 GHz
SW
-314

CR-14
V 4.00
Features
n Integral TTL Driver
n Isolation: 50 dB Typ. At 1 GHz
n Ultra Low DC Power Consumption
n Hermetic Surface Mount Package
n 50 Ohms Nominal Impedance
n MIL-STD-883 Screening Available

Description
M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive
switch with an integral silicon ASIC driver. This
device is in a 24-lead ceramic surface mount package.
These switches exhibit excellent performance from DC to 3
GHz, with very low DC power dissipation. The
SW-314 is ideally suited for RF/IF communications
applications. Environmental screening is available.
Contact the factory for information.
Electrical Specifications1,2
(From –55°C to +85°C)
Parameter Test Conditions Frequency Units Min Typ Max
Insertion Loss — DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
dB
dB
dB
dB








1.3
1.4
1.6
1.8
Isolation — DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
dB
dB
dB
dB
50
40
35
30








VSWR RFC, RF1 - RF4 (On) DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
Ratio
Ratio
Ratio
Ratio








1.6:1
1.6:1
1.6:1
1.8:1
VSWR RF1 - RF4 (Off) DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
Ratio
Ratio
Ratio
Ratio








1.3:1
1.5:1
1.9:1
2.4:1
Trise, Tfall 10% to 90% — ns — 7 —
Ton, Toff 50% Control to 90% / 10% RF — ns — 25 —
Transients In-Band (peak-peak) — mV — 20 —
1 dB Compression Input Power 0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm


+20
+27


1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.

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