TPC8201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V

Gate-source voltage

VGSS

±20

V

Drain current

DC (Note 1)

ID

5

A

Pulse (Note 1)

IDP

20

Drain power
dissipation
(t = 10 s)
(Note 2a)

Single-device operation
(Note 3a)

PD (1)

1.5

W

Single-device value at
dual operation(Note 3b)

PD (2)

1.1

W

Drain power
dissipation
(t = 10 s)
(Note 2b)

Single-device operation
(Note 3a)

PD (1)

0.75

W

Single-device value at
dual operation(Note 3b)

PD (2)

0.45

Single pulse avalanche energy (Note 4)

EAS

32.5

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)

EAR

0.1

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

·Low drain−source ON resistance : R DS (ON) = 37 mΩ (typ.)
·High forward transfer admittance : |Yfs| = 6 S (typ.)
·Low leakage current : IDSS = 10 μA (max) (VDS = 30 V)
·Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

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Datasheet

Size: 344.35KB
Page: 8
PDF: TPC8201.pdf
  • Description:
    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
  • MFG:
    TOSHIBA [Toshiba Semiconductor]
 

Abstract


TPC8201
2003-02-20 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π?MOSVI)
TPC8201

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs


G6cG20Low drain?source ON resistance : R
DS

(ON)
= 37 m? (typ.)
G6cG20High forward transfer admittance : |Y
fs
| = 6 S (typ.)
G6cG20Low leakage current : I
DSS
= 10 ?A (max) (V
DS
= 30 V)
G6cG20Enhancement?mode : V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
30 V
Drain-gate voltage (R
GS
= 20kΩ) V
DGR
30 V
Gate-source voltage V
GSS
±20 V
D C (Note 1) I
D
5
Drain curren
Pulse (Note 1) I
DP
20
A
Single-device
operation
(Note 3a)
P
D (1)
1.5
Drain power
dissipation
(t = 10s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D(2)
1.1
W
Single-device
operation
(Note 3a)
P
D (1)
0.75
Drain power
dissipation
(t = 10s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.45
W
Single pulse avalanche energy
(Note 4)
E
AS
32.5 mJ
Avalanche current I
AR
5 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
E
AR
0.1 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
?55~150 °C
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.



Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.08 g (typ.)

Circuit Configuration

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