VN10LM
N-Channel Enhancement-Mode MOS Transistors

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· Switching
· Amplification
 SYMBOL PARAMETERS/TEST CONDITIONS LIMITS Unit
VN0610LL VN10LM
 VDS Drain-Source Voltage 60  60 V
 VGS Gate-Source Voltage ±30   ±30 
 ID Continuous Drain Current TA= 25℃

0.28

0.32  A
TA= 100℃  0.17  0.2
 IDM Pulsed Drain Current1 1.3 1.4 
 PD Power Dissipation TA= 25℃ 0.8 1.0 W
TA= 100℃ 0.32  0.4
 TJ, Tstg Operating Junction & Storage Temperature Range -55 to 150
 TL Lead Temperature (1/16" from case for 10 sec.) 300
· Low rDS(on) <5Ω

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Datasheet

Size: 24.51KB
Page: 2
PDF: VN10LM.pdf
  • Description:
    N-Channel Enhancement-Mode MOS Transistors
  • MFG:
    CALOGIC [Calogic, LLC]
 

Abstract


VN0610LL, VN10LM
N-Channel Enhancement-Mode
MOS Transistors
VN0610LL / VN10LM
FEATURES
?
Low r
DS(on)
<5?
APPLICATIONS
?
Switching
?
Amplification
ORDERING INFORMATION
Part Package Temperature Range
VN0610LL Plastic TO-92 -55
o
C to +150
o
C
VN10LM Plastic TO-237 -55
o
C to +150
o
C
For sorted chips in carriers see 2N7000
CORPORATION
PIN CONNECTIONS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
SYMBOL PARAMETERS/TEST CONDITIONS
LIMITS
UNITS
VN0610LL VN10LM
VDS Drain-Source Voltage 60 60
V
VGS Gate-Source Voltage ±30 ±30
ID Continuous Drain Current
TA = 25
o
C 0.28 0.32
AT
A = 100
o
C 0.17 0.2
IDM Pulsed Drain Current
1
1.3 1.4
PD Power Dissipation
TA = 25
o
C 0.8 1.0
W
TA = 100
o
C 0.32 0.4
TJ, Tstg Operating Junction & Storage Temperature Range -55 to 150
o
C
TL Lead Temperature (1/16" from case for 10 sec.) 300
THERMAL RESISTANCE RATINGS
SYMBOL THERMAL RESISTANCE
LIMITS
UNITS
VN0610LL VN10LM
RthJA Junction-to-Ambient 156 125 K/W
1
Pulse width limited by maximum junction temperature.
TO-237
TO-92
(TO-226AA)
321
BOTTOM VIEW
1. SOURCE
2. GATE
3. DRAIN
321
BOTTOM VIEW
1. SOURCE
2. GATE
3. TAB-DRAIN
3
2
1
CD5

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