VNP10N06
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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The VNP10N06 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Symbol Parameter Value Unit
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

Internally Clamped V

 Iin

 Input Current

 ±20

 mA

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-15 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 KΩ)

4000 V

Ptot

Total Dissipation at TC=25°C 42

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.

During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.

In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V.The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage.

When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

If Tj reaches Tjsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs

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Datasheet

Size: 126.87KB
Page: 11
PDF: VNP10N06.pdf
  • Description:
    ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
  • MFG:
    STMICROELECTRONICS [STMicroelectronics]
 

Abstract


VNP10N06
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1997
1
2
3
TO-220
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNP10N06 60 V 0.3 ? 10 A
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n LOGIC LEVEL INPUT THRESHOLD
n ESD PROTECTION
n SCHMITT TRIGGER ON INPUT
n HIGH NOISE IMMUNITY
n STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP10N06 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
1/11

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